DoctorGiang Dang
Research Associate
Electrical and Computer Engineering
Orcid identifier0000-0002-7006-5593 (opens in a new tab)
- Research AssociateElectrical and Computer Engineering
- +6433692624 (Work)
- University of Canterbury, Electrical and Computer Engineering, New Zealand
RESEARCH INTERESTS
I am mainly interested in the fabrication of semiconductors devices (transistors and Schottky diodes) based on oxide semiconductors.
I use:
- mist CVD, sputtering, electron beam evaporation to deposit thin films
- SEM, EDX, AFM, XRD, TEM, XPS, optical transmittance, ellipsometry to characterize the thin films
- optical and laser interference lithography to pattern the devices and engineer the substrates for the thin film deposition.
- parameter analyzers and Keithley source measure meters to characterize the devices
Currently, I focus on the development of ultra-wide band gap alpha and beta Ga2O3 high-power electronics devices.
I use:
- mist CVD, sputtering, electron beam evaporation to deposit thin films
- SEM, EDX, AFM, XRD, TEM, XPS, optical transmittance, ellipsometry to characterize the thin films
- optical and laser interference lithography to pattern the devices and engineer the substrates for the thin film deposition.
- parameter analyzers and Keithley source measure meters to characterize the devices
Currently, I focus on the development of ultra-wide band gap alpha and beta Ga2O3 high-power electronics devices.
GRANTS
- GRANTFabrication of α-Ga2O3-based High Electron Mobility Transistors (HEMTs) using the 2D electron gas (2DEG) for high power device applicationsJapan Society for the Promotion of Science1 Sep 2016 - 31 Oct 2018